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th72012 433mhz ask transmitter 3901072012 page 1 of 20 data sheet rev. 012 jun/12 features fully integrated pll-stabilized vco frequency range from 380 mhz to 450 mhz single-ended rf output ask achieved by on/off keying of internal power amplifier up to 40 kbit/s wide power supply range from 1.95 v to 5.5 v very low standby current on-chip low voltage detector high over-all frequency accuracy adjustable output power range from -12 dbm to +10 dbm adjustable current consumption from 3.4 ma to 10.6 ma conforms to en 300 220 and similar standards 8-pin small outline integrated circuit (soic) ordering code product code temperature code package code option code packing form code th72012 k dc baa-000 re th72012 k dc baa-000 tu legend : temperature code: k for temperature range -40c to 125c package code: dc for soic packing form: re for reel, tu for tube ordering example: th72012kdc-baa-000-re application examples pin description general digital data transmission tire pressure monitoring system (tpms) remote keyless entry (rke) low-power telemetry alarm and security systems garage door openers home automation general description the th72012 ask transmitter ic is designed for appl ications in the european 433 mhz industrial-scienti fic- medical (ism) band, according to the en 300 220 tel ecommunications standard; but it can also be used i n any other country with similar frequency bands. the transmitter's carrier frequency f c is determined by the frequency of the reference cr ystal f ref . the integrated pll synthesizer ensures that each rf val ue, ranging from 380 mhz to 450 mhz, can be achieve d by using a crystal with a reference frequency accor ding to: f ref = f c /n, where n = 32 is the pll feedback divider ratio. n. c. askdta vee entx roi vcc psel out th72012 1 3 4 2 8 6 5 7
th72012 433mhz ask transmitter 3901072012 page 2 of 20 data sheet rev. 012 jun/12 document content 1 theory of operation ............................... ................................................... ................. 3 1.1 general ........................................... ................................................... ................................ 3 1.2 block diagram ..................................... ................................................... ............................ 3 2 functional description ............................ ................................................... ............... 4 2.1 crystal oscillator ................................ ................................................... ............................. 4 2.2 ask modulation .................................... ................................................... .......................... 4 2.3 crystal pulling ................................... ................................................... .............................. 4 2.4 output power selection............................. ................................................... ...................... 5 2.5 lock detection .................................... ................................................... ............................ 5 2.6 low voltage detection ............................. ................................................... ....................... 5 2.7 mode control logic ................................ ................................................... ......................... 6 2.8 timing diagrams ................................... ................................................... .......................... 6 3 pin definition and description .................... ................................................... ........... 7 4 electrical characteristics ........................ ................................................... ............... 8 4.1 absolute maximum ratings .......................... ................................................... ................... 8 4.2 normal operating conditions ....................... ................................................... ................... 8 4.3 crystal parameters ................................ ................................................... ......................... 8 4.4 dc characteristics ................................ ................................................... .......................... 9 4.5 ac characteristics ................................ ................................................... ........................ 10 4.6 output power steps ................................ ................................................... ...................... 10 5 typical operating characteristics ................. ................................................... ...... 11 5.1 dc characteristics ................................ ................................................... ........................ 11 5.2 ac characteristics ................................ ................................................... ........................ 14 6 test circuit ...................................... ................................................... ...................... 17 6.1 test circuit component list to fig. 17 ............ ................................................... ................. 17 7 package information ............................... ................................................... .............. 18 8 standard information regarding manufacturability of melexis products with different soldering processes ..................... ................................................... ......... 19 9 esd precautions ................................... ................................................... ................ 19 10 disclaimer ........................................ ................................................... ...................... 20
th72012 433mhz ask transmitter 3901072012 page 3 of 20 data sheet rev. 012 jun/12 1 theory of operation 1.1 general as depicted in fig.1, the th72012 transmitter consi sts of a fully integrated voltage-controlled oscill ator (vco), a divide-by-32 divider (div32), a phase-freq uency detector (pfd) and a charge pump (cp). an internal loop filter determines the dynamic behavio r of the pll and suppresses reference spurious sign als. a colpitts crystal oscillator (xosc) is used as the r eference oscillator of a phase-locked loop (pll) synthesizer. the vco?s output signal feeds the powe r amplifier (pa). the rf signal power p out can be adjusted in four steps from p out = ?12 dbm to +10 dbm, either by changing the value of resistor rps or by varying the voltage v ps at pin psel. the open-collector output (out) can b e used either to directly drive a loop antenna or to be matched to a 50ohm load. band gap biasing ensures stable operation of the ic at a power supply range of 1.95 v to 5.5 v. 1.2 block diagram fig. 1: block diagram with external components vee xosc pa xbuf vco pll cp pfd 32 psel rps roi xtal 8 5 32 antenna matching network out 7 cx1 1 askdta 6 vcc mode control entx 4 low voltage detector
th72012 433mhz ask transmitter 3901072012 page 4 of 20 data sheet rev. 012 jun/12 f c f eff cl eff cl r1 c1 c0 l1 xtal cl= cx1 cro cx1+cro 2 functional description 2.1 crystal oscillator a colpitts crystal oscillator with integrated funct ional capacitors is used as the reference oscillato r for the pll synthesizer. the equivalent input capacitance cro o ffered by the crystal oscillator input pin roi is a bout 18pf. the crystal oscillator is provided with an am plitude control loop in order to have a very stable frequency over the specified supply voltage and tem perature range in combination with a short start-up time. 2.2 ask modulation the pll transmitter can be ask-modulated by applying a data stream directly at the pin askdta. this turns the internal current sources of the power amplifier on and off and therefore leads to an ask signal at the output. askdta description 0 power amplifier is turned off 1 power amplifier is turned on (according to the selected output power step) 2.3 crystal pulling a crystal is tuned by the manufacturer to the required oscillation frequency f 0 at a given load capacitance cl and within the specified calibration tolerance. the only way to pull the oscillation frequency is to vary the effective load capacitance cl eff seen by the crystal. figure 2 shows the oscillation frequency of a crystal as a function of the effective load capacitance. this figure also illustrates the relationship between the external pulling capacitor and the center frequency. it can be seen that the pulling sensitivity increases with the reduction of cl. for high- accuracy ask applications, a higher load capacitance should be chosen in order to reduce the frequency drift caused by the tolerances of the chip and the external pulling capacitor. fig. 2: crystal pulling characteristic
th72012 433mhz ask transmitter 3901072012 page 5 of 20 data sheet rev. 012 jun/12 2.4 output power selection the transmitter is provided with an output power se lection feature. there are four predefined output p ower steps and one off-step accessible via the power sel ection pin psel. a digital power step adjustment wa s chosen because of its high accuracy and stability. the number of steps and the step sizes as well as t he corresponding power levels are selected to cover a wide spectrum of different applications. the implementation of the output power control logic is shown in figure 3. there are two matched current sources with an amount of about 8 a. one current source is directly applied to the psel pin. the other current source is used for the generation of reference voltages with a resistor ladder. these reference voltages are defining the thresholds between the power steps. the four comparators deliver thermometer-coded control signals depending on the voltage level at the pin psel. in order to have a certain amount of ripple tolerance in a noisy environment the comparators are provided with a little hysteresis of about 20 mv. with these control signals, weighted current sources of the power amplifier are switched on or off to set the desired output power level (digitally controlled current source). the lock, ask signal and the output of the low voltage detector are gating this current source. fig. 3: block diagram of output power control circu itry there are two ways to select the desired output pow er step. first by applying a dc voltage at the pin psel, then this voltage directly selects the desired outp ut power step. this kind of power selection can be used if the transmission power must be changed during opera tion. for a fixed-power application a resistor can be used which is connected from the psel pin to ground . the voltage drop across this resistor selects the desired output power level. for fixed-power applica tions at the highest power step this resistor can b e omitted. the pin psel is in a high impedance state during the ?tx standby? mode. 2.5 lock detection the lock detection circuitry turns on the power amp lifier only after pll lock. this prevents from unwa nted emission of the transmitter if the pll is unlocked. 2.6 low voltage detection the supply voltage is sensed by a low voltage detec t circuitry. the power amplifier is turned off if t he supply voltage drops below a value of about 1.85 v. this i s done in order to prevent unwanted emission of the transmitter if the supply voltage is too low. askdta & & & psel & & rps out
th72012 433mhz ask transmitter 3901072012 page 6 of 20 data sheet rev. 012 jun/12 2.7 mode control logic the mode control logic allows two different modes of operation as listed in the following table. the mode control pin entx is pulled- down internally. this guarantees that the whole circuit is shut down if this pin is left floating. entx mode description 0 tx standby tx disabled 1 tx active tx enable 2.8 timing diagrams after enabling the transmitter by the entx signal, the power amplifier remains inactive for the time t on , the transmitter start-up time. the crystal oscillator s tarts oscillation and the pll locks to the desired output frequency within the time duration t on . after successful pll lock, the lock signal turns on the power amplifier, and then the rf carrier can be ask modul ated. fig. 4: timing diagram for ask modulation low low high high lock askdta rf carrier t low high entx t on
th72012 433mhz ask transmitter 3901072012 page 7 of 20 data sheet rev. 012 jun/12 3 pin definition and description pin no. name i/o type functional schematic description 1 askdta input ask data input, cmos compatible with operation mode dependent pull-up circuit tx standby: no pull-up tx active: pull-up 2 n. c. no connection 3 roi analog i/o xosc connection to xtal, colpitts type crystal oscillator 4 entx input mode control input, cmos-compatible with internal pull-down circuit 5 psel analog i/o power select input, high- impedance comparator logic tx standby: i psel = 0 tx active: i psel = 8a 6 vcc supply positive power supply 7 out output power amplifier output, open collector 8 vee ground negative power supply 1.5k 1 0: entx=1 1: entx=0 askdta roi 3 36p 36p 25k entx 4 1.5k psel 5 1.5k psel i out 7 vee vee vcc
th72012 433mhz ask transmitter 3901072012 page 8 of 20 data sheet rev. 012 jun/12 4 electrical characteristics 4.1 absolute maximum ratings parameter symbol condition min max unit supply voltage v cc 0 7.0 v input voltage v in -0.3 v cc +0.3 v storage temperature t stg -65 150 c junction temperature t j 150 c thermal resistance r thja 163 k/w power dissipation p diss 0.12 w electrostatic discharge v esd human body model (hbm) according to cdf-aec- q100-002 2.0 kv 4.2 normal operating conditions parameter symbol condition min max unit supply voltage v cc 1.95 5.5 v operating temperature t a -40 125 c input low voltage cmos v il entx, askdta pins 0.3*v cc v input high voltage cmos v ih entx, askdta pins 0.7*v cc v xosc frequency f ref set by the crystal 11.9 14 mhz vco frequency f c f c = 32 ? f ref 380 450 mhz data rate r nrz 40 kbit/s 4.3 crystal parameters parameter symbol condition min max unit crystal frequency f 0 fundamental mode, at 11.9 14 mhz load capacitance c l 10 15 pf static capacitance c 0 7 pf series resistance r 1 70
th72012 433mhz ask transmitter 3901072012 page 9 of 20 data sheet rev. 012 jun/12 4.4 dc characteristics all parameters under normal operating conditions, u nless otherwise stated; typical values at t a = 23 c and v cc = 3 v parameter symbol condition min typ max unit operating currents standby current i sby entx=0, t a =85c 0.2 200 na entx=0, t a =125c 4 a supply current in power step 0 i cc0 entx=1 1.5 2.5 3.8 ma supply current in power step 1 i cc1 entx=1 2.1 3.4 4.9 ma supply current in power step 2 i cc2 entx=1 3.0 4.6 6.2 ma supply current in power step 3 i cc3 entx=1 4.5 6.5 8.5 ma supply current in power step 4 i cc4 entx=1 7.3 10.6 13.3 ma digital pin characteristics input low voltage cmos v il entx, askdta pins -0.3 0.3*v cc v input high voltage cmos v ih entx, askdta pins 0.7*v cc v cc +0.3 v pull down current entx pin i pden entx=1 0.2 2.0 20 a low level input current entx pin i inlen entx=0 0.02 a high level input current askdta pin i inhdta askdta=1 0.02 a pull up current askdta pin active i pudtaa askdta=0 entx=1 0.1 1.5 12 a pull up current askdta pin standby i pudtas askdta=0 entx=0 0.02 a power select characteristics power select current i psel entx=1 7.0 8.6 9.9 a power select voltage step 0 v ps0 entx=1 0.035 v power select voltage step 1 v ps1 entx=1 0.14 0.24 v power select voltage step 2 v ps2 entx=1 0.37 0.60 v power select voltage step 3 v ps3 entx=1 0.78 1.29 v power select voltage step 4 v ps4 entx=1 1.55 v low voltage detection characteristic low voltage detect threshold v lvd entx=1 1.75 1.85 1.95 v
th72012 433mhz ask transmitter 3901072012 page 10 of 20 data sheet rev. 012 jun/12 4.5 ac characteristics all parameters under normal operating conditions, u nless otherwise stated; typical values at t a = 23 c and v cc = 3 v; test circuit shown in fig. 18, f c = 433.92 mhz parameter symbol condition min typ max unit cw spectrum characteristics output power in step 0 (isolation in off-state) p off entx=1 -70 dbm output power in step 1 p 1 entx=1 -13 -12 -10 1) dbm output power in step 2 p 2 entx=1 -3.5 -3 -1.5 1) dbm output power in step 3 p 3 entx=1 2 3 4.5 1) dbm output power in step 4 p 4 entx=1 4.5 8 10 1) dbm phase noise l(f m ) @ 200khz offset -88 -83 dbc/hz spurious emissions according to en 300 220-1 (2000.09) table 13 p spur 47mhz< f <74mhz 87.5mhz< f <118mhz 174mhz< f <230mhz 470mhz< f <862mhz b=100khz -54 dbm f < 1ghz, b=100khz -36 dbm f > 1ghz, b=1mhz -30 dbm start-up parameters start-up time t on from standby to transmit mode 0.8 1.2 ms frequency stability frequency stability vs. supply voltage df vcc 3 ppm frequency stability vs. temperature df ta crystal at constant temperature 10 ppm 1) output matching network tuned for 5v supply 4.6 output power steps power step 0 1 2 3 4 rps / k < 3 22 56 120 not connected
th72012 433mhz ask transmitter 3901072012 page 11 of 20 data sheet rev. 012 jun/12 icc [ma] 1.8 2.2 2.6 3.0 3.4 power step 0 -40c -20c 0c 25c 85c 105c 125c vcc [v] 2.2 1.8 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 vcc [v] 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 standby current sby i 0 50na 150na 100na 200na 1a 2a 3a 4a 5a 125c 85c 25c 5 typical operating characteristics 5.1 dc characteristics fig. 5: standby current limits fig. 6: supply current in power step 0
th72012 433mhz ask transmitter 3901072012 page 12 of 20 data sheet rev. 012 jun/12 -40c -20c 0c 25c 85c 105c 125c 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 icc [ma] 2.7 3.0 3.3 3.6 3.9 4.2 power step 1 vcc [v] i c c [ m a ] 3.8 4.2 4.6 5.0 5.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 0c 25c 85c 105c 125c -20c -40c vcc [v] power step 2 fig. 7: supply current in power step 1 fig. 8: supply current in power step 2
th72012 433mhz ask transmitter 3901072012 page 13 of 20 data sheet rev. 012 jun/12 i c c [ m a ] 5.5 5.8 6.1 6.4 6.7 7.0 7.3 0c 25c 85c 105c 125c -20c -40c 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 1.8 vcc [v] power step 3 0c 25c 85c 105c 125c -20c -40c 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 icc [ma] 9.0 9.5 10.0 10.5 11.0 11.5 12.0 vcc [v] power step 4 fig. 9: supply current in power step 3 fig. 10: supply current in power step 4
th72012 433mhz ask transmitter 3901072012 page 14 of 20 data sheet rev. 012 jun/12 5.2 ac characteristics ? data according to test circuit in fig. 17 fig. 11: output power in step 1 fig. 12: output power in step 2 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 vcc [v] 1.8 -13.0 -13.5 -14.0 -12.5 -12.0 -11.5 -40c 125c 25c 85c 5.8 power step 1 pout [dbm] -40c 125c 25c power step 2 -4.0 -3.0 -2.0 -1.0 vcc [v] 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 85c pout [dbm]
th72012 433mhz ask transmitter 3901072012 page 15 of 20 data sheet rev. 012 jun/12 fig. 13: output power in step 3 fig. 14: output power in step 4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 vcc [v] 1.0 2.0 3.0 4.0 0 5.0 -40c 125c 85c 25c 5.8 power step 3 pout [dbm] 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 vcc [v] power step 4 pout [dbm] 4.0 6.0 8.0 10.0 2.0 12.0 -40c 125c 85c 25c
th72012 433mhz ask transmitter 3901072012 page 16 of 20 data sheet rev. 012 jun/12 fig. 15: rf output signal with pll reference spurs fig. 16: single sideband phase noise
th72012 433mhz ask transmitter 3901072012 page 17 of 20 data sheet rev. 012 jun/12 6 test circuit fig. 17: test circuit for ask with 50 matching network 6.1 test circuit component list to fig. 17 part size value @ 433.92 mhz tolerance description cm1 0805 5.6 pf 5% impedance matching capacitor cm2 0805 10 pf 5% impedance matching capacitor cm3 0805 82 pf 5% impedance matching capacitor lm 0805 33 nh 5% impedance matching inductor, note 2 lt 0805 33 nh 5% output tank inductor, note 2 cx1 0805 27 pf 5% xosc capacitor, note 1 rps 0805 see para. 4.6 5% power-select resistor cb0 1206 220 nf 20% blocking capacitor cb1 0805 330 pf 10% blocking capacitor xtal hc49/s 13.56000 mhz 30ppm calibr. 30ppm temp. fundamental wave crystal, c l = 12 pf, c 0, max = 7 pf, r 1 = 60 note 1: value depending on crystal parameters note 2: for high-power applications high-q wire-wound in ductors should be used a s k d t a rps out vee vcc psel e n t x n.c. xtal roi 6 7 8 5 cx1 cm1 lt cm3 cm2 out lm cb1 cb0 2 3 1 vcc data gnd 2 1 vcc gnd 2 3 1 vcc entx gnd
th72012 433mhz ask transmitter 3901072012 page 18 of 20 data sheet rev. 012 jun/12 7 package information fig. 18: soic8 (small outline integrated circuit) all dimension in mm, coplanarity < 0.1mm d e h a a1 a2 e b zd c l min 4.80 3.81 5.80 1.52 0.10 1.37 1.27 0.36 0.53 0.19 0.41 0 max 4.98 3.99 6.20 1.72 0.25 1.57 0.46 0.25 1.27 8 all dimension in inch, coplanarity < 0.004? min 0.189 0.150 0.2284 0.060 0.0040 0.054 0.050 0.014 0.021 0.075 0.016 0 max 0.196 0.157 0.2440 0.068 0.0098 0.062 0.018 0.098 0.050 8 e d 8 1 zd h e b a1 a2 a 7 l detail - a detail - a 0.38 x 45 (0.015x45) bsc c .10 (.004)
th72012 433mhz ask transmitter 3901072012 page 19 of 20 data sheet rev. 012 jun/12 8 standard information regarding manufacturability of melexis products with different soldering processes our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test metho ds: reflow soldering smd?s (s urface m ount d evices) ? ipc/jedec j-std-020 moisture/reflow sensitivity classification for nonh ermetic solid state surface mount devices (classification reflow profiles according to table 5-2) ? eia/jedec jesd22-a113 preconditioning of nonhermetic surface mount device s prior to reliability testing (reflow profiles according to table 2) wave soldering smd?s (s urface m ount d evices) and thd?s (t hrough h ole d evices) ? en60749-20 resistance of plastic- encapsulated smd?s to combin ed effect of moisture and soldering heat ? eia/jedec jesd22-b106 and en60749-15 resistance to soldering temperature for through-hol e mounted devices iron soldering thd?s (t hrough h ole d evices) ? en60749-15 resistance to soldering temperature for through-hol e mounted devices solderability smd?s (s urface m ount d evices) and thd?s (t hrough h ole d evices) ? eia/jedec jesd22-b102 and en60749-21 solderability for all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature prof ile etc) additional classification and qualificatio n tests have to be agreed upon with melexis. the application of wave soldering for smd?s is allo wed only after consulting melexis regarding assuran ce of adhesive strength between device and board. melexis is contributing to global environmental con servation by promoting lead free solutions. for more information on qualifications of rohs compliant products (rohs = european directive on t he restriction of the use of certain hazardous substances) please vis it the quality page on our website: http://www.melexis.com/quality.aspx 9 esd precautions electronic semiconductor products are sensitive to electro static discharge (esd). always observe electro static discharge control pro cedures whenever handling semiconductor products.
th72012 433mhz ask transmitter 3901072012 page 20 of 20 data sheet rev. 012 jun/12 10 disclaimer devices sold by melexis are covered by the warranty and patent indemnification provisions appearing in its term of sale. melexis makes no warranty, express, s tatutory, implied, or by description regarding the information set forth herein or regarding the freed om of the described devices from patent infringemen t. melexis reserves the right to change specifications and prices at any time and without notice. therefo re, prior to designing this product into a system, it is nece ssary to check with melexis for current information . this product is intended for use in normal commercial ap plications. applications requiring extended tempera ture range, unusual environmental requirements, or high reliability applications, such as military, medical life- support or life-sustaining equipment are specifical ly not recommended without additional processing by melexis for each application. the information furnished by melexis is believed to be correct and accurate. however, melexis shall no t be liable to recipient or any third party for any dama ges, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequ ential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the t echnical data herein. no obligation or liability to recipien t or any third party shall arise or flow out of mel exis? rendering of technical or other services. ? 2012 melexis nv. all rights reserved. for the latest version of this document, go to our website at www.melexis.com or for additional information contact melexis direc t: europe, africa, asia: america: phone: +32 1367 0495 phone: +1 248 306 5400 e-mail: sales_europe@melexis.com e-mail: sales_usa @melexis.com iso/ts 16949 and iso14001 certified

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